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RQ6P020ATTCR

Name: ROHM Semiconductor RQ6P020ATTCR
Brand: ROHM Semiconductor
SKU: 755-RQ6P020ATTCR
Price: 306.43 HUF
Availability: InStock

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Mouser No:

755-RQ6P020ATTCR

Mfr. No:

RQ6P020ATTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive)

Datasheet:

RQ6P020ATTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RQ6P020ATTCR

In Stock: 4 215

Stock:: 4 215 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (HUF)

Qty.	Unit Price	Ext. Price
	306,43 Ft	306,43 Ft
	217,98 Ft	2 179,80 Ft
	145,97 Ft	14 597,00 Ft
	112,71 Ft	56 355,00 Ft
	102,14 Ft	102 140,00 Ft
Full Reel (Order in multiples of 3000)
	88,05 Ft	264 150,00 Ft
	81,40 Ft	488 400,00 Ft
	76,31 Ft	686 790,00 Ft

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-457T-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	220 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	30 ns
Forward Transconductance - Min:	3.4 S
Product Type:	MOSFETs
Rise Time:	11 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	83 ns
Typical Turn-On Delay Time:	8.9 ns

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

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