UCC28780D

Texas Instruments
595-UCC28780D
UCC28780D

Mfr.:

Description:
Switching Controllers 1-MHz High Frequency Active Clamp Flybac A 595-UCC28780DR

ECAD Model:
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In Stock: 316

Stock:
316 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- Ft
Ext. Price:
-,-- Ft
Est. Tariff:

Pricing (HUF)

Qty. Unit Price
Ext. Price
759,22 Ft 759,22 Ft
563,54 Ft 5 635,40 Ft
493,10 Ft 12 327,50 Ft
450,05 Ft 54 006,00 Ft
442,23 Ft 123 824,40 Ft
414,83 Ft 215 711,60 Ft
399,18 Ft 399 180,00 Ft
387,05 Ft 975 366,00 Ft
380,39 Ft 1 901 950,00 Ft

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
645,73 Ft
Min:
1

Similar Product

Texas Instruments UCC28780DR
Texas Instruments
Switching Controllers 1-MHz High Frequency Active Clamp Flybac A 595-UCC28780D

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Switching Controllers
RoHS:  
Flyback
1 Output
1 MHz
99 %
19.853 V
2.25 A
- 40 C
+ 125 C
SMD/SMT
SOIC-Narrow-16
Tube
Brand: Texas Instruments
Description/Function: High Frequency Active Clamp Flyback Controller
Development Kit: UCC28780EVM-002
Fall Time: 10 ns
Isolation: Isolated
Operating Supply Current: 2.5 mA
Operating Supply Voltage: 15 V
Product: Flyback Controllers
Product Type: Switching Controllers
Rise Time: 10 ns
Series: UCC28780
Shutdown: Shutdown
Factory Pack Quantity: 40
Subcategory: PMIC - Power Management ICs
Unit Weight: 238,500 mg
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542310030
MXHTS:
8542399901
ECCN:
EAR99

UCC28780 Zero Voltage Switching Flyback Controller

Texas Instruments UCC28780 Zero Voltage Switching Flyback Controller is a high-frequency active-clamp flyback controller that enables high-density AC-to-DC power supplies. These power supplies will comply with stringent global efficiency standards such as DoE Level VI and EU CoC V5 Tier-2. User-programmable advanced control law features optimize performance for Silicon (Si) and Gallium Nitride (GaN) power FETs. Direct operation with switching devices that combine driver and GaN FETs is further enhanced with logic-level gate signals and enable outputs.