SiC MOSFETs – Mouser Hungary

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Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: 8 417,94 Ft
266In Stock
600On Order
New Product

Mfr. Part No.
SCT011HU75G3AG

Mouser Part No
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

266In Stock

600On Order

Cut Tape

8 417,94 Ft

6 187,24 Ft

6 183,33 Ft

Reel

5 776,33 Ft

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: 6 981,68 Ft
640In Stock
New Product

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

640In Stock

6 981,68 Ft

4 555,31 Ft

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: 7 846,57 Ft
877In Stock
New Product

Mfr. Part No.
SCT016H120G3AG

Mouser Part No
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

877In Stock

Cut Tape

7 846,57 Ft

5 678,49 Ft

5 666,75 Ft

5 662,83 Ft

Reel

5 291,05 Ft

MouseReel Available

Min.: 1
Mult.: 1

Reel: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: 6 903,41 Ft
723In Stock
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

723In Stock

Cut Tape

6 903,41 Ft

5 721,54 Ft

4 946,66 Ft

Reel

4 594,45 Ft

Quote

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: 6 359,44 Ft
513In Stock
New Product

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

513In Stock

6 359,44 Ft

4 046,56 Ft

Min.: 1
Mult.: 1

Through Hole

Hip247-4

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: 6 081,58 Ft
482In Stock
New Product

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

482In Stock

6 081,58 Ft

4 449,65 Ft

3 905,67 Ft

3 721,74 Ft

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: 4 547,49 Ft
1 005In Stock
600On Order
New Product

Mfr. Part No.
SCT040HU120G3AG

Mouser Part No
511-SCT040HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Learn More

Datasheet

1 005In Stock

600On Order

Cut Tape

4 547,49 Ft

3 185,59 Ft

2 805,98 Ft

Reel

2 751,19 Ft

2 622,05 Ft

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

40 A

72 mOhms

- 10 V, + 22 V

3 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: 6 915,15 Ft
154In Stock
1 000Expected 3/1/2027

Mfr. Part No.
SCT012H90G3AG

Mouser Part No
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

154In Stock

1 000Expected 3/1/2027

Cut Tape

6 915,15 Ft

4 966,23 Ft

4 825,35 Ft

Reel

4 508,35 Ft

Min.: 1
Mult.: 1

Reel: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: 4 390,95 Ft
599In Stock

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

599In Stock

4 390,95 Ft

3 068,18 Ft

2 508,55 Ft

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: 4 269,63 Ft
142In Stock

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

142In Stock

Cut Tape

4 269,63 Ft

2 993,83 Ft

2 602,48 Ft

Reel

2 430,28 Ft

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: 4 594,45 Ft
73In Stock
1 200Expected 5/4/2026

Mfr. Part No.
SCT070HU120G3AG

Mouser Part No
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

73In Stock

1 200Expected 5/4/2026

Cut Tape

4 594,45 Ft

3 216,90 Ft

2 849,03 Ft

Reel

2 657,27 Ft

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: 5 788,07 Ft
571In Stock

Mfr. Part No.
SCTW40N120G2VAG

Mouser Part No
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

571In Stock

5 788,07 Ft

3 592,59 Ft

3 584,77 Ft

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

SCTWA40N12G24AG
STMicroelectronics
1: 5 909,39 Ft
90In Stock

Mfr. Part No.
SCTWA40N12G24AG

Mouser Part No
511-SCTWA40N12G24AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Learn More

Datasheet

90In Stock

5 909,39 Ft

4 199,19 Ft

3 678,69 Ft

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 18 V, + 18 V

5 V

63 nC

- 55 C

+ 200 C

290 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: 5 776,33 Ft
9In Stock
2 000Expected 10/12/2026
New Product

Mfr. Part No.
SCT025H120G3AG

Mouser Part No
511-SCT025H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

9In Stock

2 000Expected 10/12/2026

Cut Tape

5 776,33 Ft

4 097,43 Ft

3 827,40 Ft

Reel

3 569,11 Ft

Min.: 1
Mult.: 1

Reel: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: 8 104,86 Ft
600Expected 9/21/2026

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

600Expected 9/21/2026

8 104,86 Ft

5 506,29 Ft

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: 5 995,48 Ft
1 200Expected 11/9/2026

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

1 200Expected 11/9/2026

5 995,48 Ft

4 265,72 Ft

3 745,22 Ft

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: 4 269,63 Ft
996Expected 4/22/2026

Mfr. Part No.
SCT040H120G3AG

Mouser Part No
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

996Expected 4/22/2026

Cut Tape

4 269,63 Ft

2 993,83 Ft

2 602,48 Ft

Reel

2 430,28 Ft

Min.: 1
Mult.: 1

Reel: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: 4 230,49 Ft
1 113Expected 3/19/2026

Mfr. Part No.
SCT055HU65G3AG

Mouser Part No
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1 113Expected 3/19/2026

Cut Tape

4 230,49 Ft

2 970,35 Ft

2 575,08 Ft

Reel

2 406,80 Ft

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3-7
STMicroelectronics
1: 5 651,09 Ft
100On Order
New Product

Mfr. Part No.
SCT025H120G3-7

Mouser Part No
511-SCT025H120G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

100On Order

Cut Tape

5 651,09 Ft

4 371,38 Ft

3 784,35 Ft

3 780,44 Ft

Reel

3 342,13 Ft

Min.: 1
Mult.: 1

Reel: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: 3 870,45 Ft
100On Order
New Product

Mfr. Part No.
SCT040W120G3-4

Mouser Part No
511-SCT040W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

3 870,45 Ft

2 348,10 Ft

2 164,17 Ft

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

SCTWA40N120G2V
STMicroelectronics
1: 6 128,54 Ft
Non-Stocked Lead-Time 32 Weeks
NRND

Mfr. Part No.
SCTWA40N120G2V

Mouser Part No
511-SCTWA40N120G2V

NRND

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Learn More

Datasheet

Non-Stocked Lead-Time 32 Weeks

6 128,54 Ft

4 907,53 Ft

4 242,23 Ft

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

2.45 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

Automotive-Grade Silicon Carbide Power MOSFETs

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