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RH7P04BBKFRATCB

Name: ROHM Semiconductor RH7P04BBKFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7P04BBKFRATCB
Price: 810.09 HUF
Availability: InStock

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Mouser No:

755-RH7P04BBKFRATCB

Mfr. No:

RH7P04BBKFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN8 N CHAN 100V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7P04BBKFRATCB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RH7P04BBKFRATCB

In Stock: 2 065

Stock:: 2 065 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (HUF)

Qty.	Unit Price	Ext. Price
	810,09 Ft	810,09 Ft
	520,50 Ft	5 205,00 Ft
	356,91 Ft	35 691,00 Ft
	283,73 Ft	141 865,00 Ft
	263,77 Ft	263 770,00 Ft
Full Reel (Order in multiples of 3000)
	235,98 Ft	707 940,00 Ft

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	13.8 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	19.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	19 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

RH7P04BBKFRATCB Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RH7P04BBKFRA 100V N-Channel Power MOSFET

ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET is a 100V drain-source voltage (V_DSS) and ±40A continuous drain current (I_D) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [R_DS(ON)] is 13.8mΩ (max.) (V_GS = 10V, I_D = 20A) and comes in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7P04BBKFRA MOSFET is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.