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MMFTP2319

Name: Diotec Semiconductor MMFTP2319
Brand: Diotec Semiconductor
SKU: 637-MMFTP2319
Price: 205.46 HUF
Availability: InStock

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See Product Specifications

Mouser No:

637-MMFTP2319

Mfr. No:

MMFTP2319

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P

Datasheet:

MMFTP2319 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diotec Semiconductor MMFTP2319

In Stock: 3 733

Stock:: 3 733 Can Dispatch Immediately

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Pricing (HUF)

Qty.	Unit Price	Ext. Price
	205,46 Ft	205,46 Ft
	145,19 Ft	1 451,90 Ft
	101,36 Ft	10 136,00 Ft
	88,84 Ft	44 420,00 Ft
	82,57 Ft	82 570,00 Ft
Full Reel (Order in multiples of 3000)
	61,05 Ft	183 150,00 Ft
	45,40 Ft	408 600,00 Ft
	44,22 Ft	1 061 280,00 Ft
	33,66 Ft	1 514 700,00 Ft

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	4.2 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	750 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Series:	MMFTN/P
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	15 ns

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Datasheet

MMFTP2319 Datasheet (PDF)

Models

Full Material Declaration (PDF)

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

MMFTP2319 P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET offers fast switching times in a SOT-23/TO-236 package. The MMFTP2319 FET features a 40V maximum drain-source voltage, 750mW maximum power dissipation, and a 4.2A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET is ideal for signal processing, battery management, drivers, and logic-level converters.

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.