IRF100B201

Infineon Technologies
942-IRF100B201
IRF100B201

Mfr.:

Description:
MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg

Datasheet:
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Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
192 A
4.2 mOhms
- 20 V, 20 V
2 V
170 nC
- 55 C
+ 175 C
441 W
Enhancement
StrongIRFET
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 100 ns
Forward Transconductance - Min: 278 S
Product Type: MOSFETs
Rise Time: 97 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 17 ns
Unit Weight: 2 g
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Malaysia
The country is subject to change at the time of shipment.

IRF100x201 HEXFET™ Power MOSFETs

Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.

In Stock: 3 957

Stock:
3 957
Can Dispatch Immediately
On Order:
27 000
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 1000
Unit Price:
-,-- Ft
Ext. Price:
-,-- Ft
Est. Tariff:

Pricing (HUF)

Qty. Unit Price
Ext. Price
1 284,04 Ft 1 284,04 Ft
763,19 Ft 7 631,90 Ft
611,27 Ft 61 127,00 Ft
513,61 Ft 256 805,00 Ft
448,51 Ft 448 510,00 Ft

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