It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DI006H03SQ

Name: Diotec Semiconductor DI006H03SQ
Brand: Diotec Semiconductor
SKU: 637-DI006H03SQ
Price: 794.44 HUF
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

637-DI006H03SQ

Mfr. No:

DI006H03SQ

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SO-8, 30V, 6A, 150C, N+P

Datasheet:

DI006H03SQ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diotec Semiconductor DI006H03SQ

In Stock: 3 949

Stock:: 3 949 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- Ft

Ext. Price:

-,-- Ft

Est. Tariff:

Pricing (HUF)

Qty.	Unit Price	Ext. Price
	794,44 Ft	794,44 Ft
	536,15 Ft	5 361,50 Ft
	363,56 Ft	36 356,00 Ft
	304,08 Ft	152 040,00 Ft
Full Reel (Order in multiples of 4000)
	250,46 Ft	1 001 840,00 Ft
	242,64 Ft	1 941 120,00 Ft
24 000	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A, 4.2 A
Rds On - Drain-Source Resistance:	25 mOhms, 50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 2 V
Qg - Gate Charge:	11.7 nC, 11.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Quad
Fall Time:	8.7 ns, 13.5 ns
Forward Transconductance - Min:	4 S, 3.5 S
Product Type:	MOSFETs
Rise Time:	15 ns, 4.9 ns
Series:	DI0XX
Factory Pack Quantity:	4000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	17.5 ns, 28.2 ns
Typical Turn-On Delay Time:	11.2 ns, 7.5 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DI006H03SQ Datasheet (PDF)

Models

Full Material Declaration (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.