PMDXB550UNEZ

Nexperia
771-PMDXB550UNEZ
PMDXB550UNEZ

Mfr.:

Description:
MOSFETs SOT1216 2NCH 30V .59A

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
140 000
Expected 2/8/2027
Factory Lead Time:
8
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- Ft
Ext. Price:
-,-- Ft
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (HUF)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
178,46 Ft 178,46 Ft
108,40 Ft 1 084,00 Ft
69,27 Ft 6 927,00 Ft
51,66 Ft 25 830,00 Ft
42,27 Ft 42 270,00 Ft
41,87 Ft 104 675,00 Ft
Full Reel (Order in multiples of 5000)
36,40 Ft 182 000,00 Ft
32,09 Ft 320 900,00 Ft
31,70 Ft 792 500,00 Ft
† A MouseReel™ fee of 1 940,00 Ft will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-1010-6
N-Channel
2 Channel
30 V
590 mA
670 mOhms
- 8 V, 8 V
450 mV
1.05 nC
- 55 C
+ 150 C
4.03 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Nexperia
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Fall Time: 3 ns
Forward Transconductance - Min: 600 mS
Product Type: MOSFETs
Rise Time: 7 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 4 ns
Part # Aliases: 934069326147
Unit Weight: 1,290 mg
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Attributes selected: 0

Datasheet

Application Notes

PCN

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

PMDXB550UNE Dual N-Channel MOSFET

Nexperia PMDXB550UNE Dual N-Channel MOSFET is a surface mount device that offers a low threshold voltage. This 30V enhancement mode Field-Effect Transistor (FET) features exposed drain pad for an excellent thermal conduction and ESD protection. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits. The PMDXB550UNE MOSFET is designed using Trench MOSFET technology and is available in a leadless ultra-small DFN1010B-6 (SOT1216) plastic package.

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

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