Infineon Technologies 1200V TRENCHSTOP™ IGBT6

Infineon Technologies 1200V TRENCHSTOP™ IGBT6 are designed to meet requirements of high efficiency, lower conduction losses, and switching losses. These TRENCHSTOP IGBT6 feature low gate charge, low Electromagnetic Interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. The TRENCHSTOP IGBT6 is released in 2 product families, low conduction losses optimized S6 series and improved switching losses H6 series. These IGBT6 are plug-and-play replacements of predecessor HighSpeed3 H3 IGBT. The TRENCHSTOP IGBT6 implement the trench and fieldstop technology copacked with soft and fast recovery anti-parallel diode. These 1200V TRENCHSTOP IGBT6 achieve easy paralleling capability due to positive temperature coefficient in V_CEsat. Typical applications include industrial UPS, energy storage, three-level solar string inverter, and welding.

Features

Low conduction losses
Low switching losses
High efficiency in hard switching and resonant topologies
Low EMI

Low gate charge
Easy paralleling capability due to positive temperature coefficient in V_CEsat
Very soft and fast recovery full current anti-parallel diode
175°C maximum junction temperature

Applications

Industrial UPS
Charger
Welding

Energy storage
Three-level solar string

Additional Resources

Recommendations for Screw Tightening Torque for IGBT Discrete Devices

View Results ( 5 ) Page

Part Number	Continuous Collector Current at 25 C	Pd - Power Dissipation	Package/Case
IKY40N120CS6XKSA1	80 A	500 W	TO-247-4
IKW15N120BH6XKSA1	30 A	200 W	TO-247-3
IKW40N120CS6XKSA1	80 A	500 W	TO-247-3
IKQ75N120CS6XKSA1	150 A	880 W	TO-247-3-46
IKY75N120CS6XKSA1	150 A	880 W	TO-247-4